| PART |
Description |
Maker |
| HYMP112U64CR8-C4 HYMP125U64CR8-C4 HYMP112U64CR8-S5 |
240pin DDR2 SDRAM Unbuffered DIMMs
64M X 64 DDR DRAM MODULE, 0.4 ns, ZMA240 ROHS COMPLIANT, DIMM-240
64M X 64 DDR DRAM MODULE, 0.45 ns, ZMA240 ROHS COMPLIANT, DIMM-240
128M X 64 DDR DRAM MODULE, 0.45 ns, ZMA240 ROHS COMPLIANT, DIMM-240
128M X 72 DDR DRAM MODULE, 0.5 ns, ZMA240 ROHS COMPLIANT, DIMM-240
128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA240 ROHS COMPLIANT, DIMM-240
128M X 72 DDR DRAM MODULE, 0.45 ns, ZMA240 ROHS COMPLIANT, DIMM-240
|
http://
Hynix Semiconductor, Inc.
|
| HYMP532U64CP6-Y5 HYMP512U64CP8-C4 |
32M X 64 DDR DRAM MODULE, 0.45 ns, ZMA240 ROHS COMPLIANT, SODIMM-240
128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA240
|
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
| MT18VDDF12872HY-335XX MT18VDDF12872HG-265 MT18VDDF |
128M X 72 DDR DRAM MODULE, 0.7 ns, DMA200
DDR SDRAM SODIMM
|
Micron Technology
|
| M2U1G64TU8HA2B-3C M2U1G64TU8HA0B-3C M2Y1G64TU8HA2B |
128M X 64 DDR DRAM MODULE, 0.45 ns, DMA240 DIMM-240
128M X 64 DDR DRAM MODULE, 0.45 ns, DMA240 GREEN, DIMM-240
|
Nanya Technology, Corp.
|
| EBD11ED8ADFB-7B EBD11ED8ADFB EBD11ED8ADFB-6B EBD11 |
1GB Unbuffered DDR SDRAM DIMM (128M words x72 bits, 2 Ranks) 1GB的无缓冲DDR SDRAM的内存（128M的话x72位，2个等级）
1GB Unbuffered DDR SDRAM DIMM (128M words x72 bits, 2 Ranks) 128M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| NT1GT72U4PB0BV-25D |
128M X 72 DDR DRAM MODULE, 0.4 ns, DMA240
|
NANYA TECHNOLOGY CORP
|
| HYS72D128300GBR-7-B |
128M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
|
INFINEON TECHNOLOGIES AG
|
| M368L6523BUM-LCC M381L6523BUM-LB3 M368L6523BTM-LCC |
64M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II DDR SDRAM的缓冲模84pin缓冲模块基于512Mb乙芯片与64/72-bit非ECC / ECC6 TSOP-II
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70ns; Series:S29AL
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-FBGA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:90ns; Series:S29AL
Single-Supply Voltage Translator 6-SOT-23 -40 to 85
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| V8274128N24SXSG-A1 |
128M X 72 DDR DRAM MODULE, 0.8 ns, DMA184 DIMM-184
|
Mosel Vitelic, Corp.
|
| NT1GT64U8HA0B-3C NT1GT64U8HA0F-3C |
128M X 64 DDR DRAM MODULE, 0.45 ns, DMA240 DIMM-240
|
Nanya Technology, Corp.
|
|
